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Samsung Announces Mass Production for 2nd Generation Process for 10 nm DRAM

Category: Manufacturers
Posted: 10:29AM

Today Samsung announced it has begun mass production of its second generation 10 nm class 8 Gb DDR4 DRAM. These new DRAM chips feature better performance and efficiency than current chips, such as up to 3600 Mbps connections per pin, compared to the maximum 3200 Mbps for the previous generation from Samsung. This is combined with a 10-15% increase to energy efficiency, thanks to the use of advanced circuit design technologies, which have been applied without the use of a EUV process. An example would be an air spacer scheme that decreases parasitic capacitance between the bit lines.

Following this work, Samsung is accelerating its plans for introducing next generation DRAM technologies, including DDR4, HBM3, LPDDR5, and GDDR6.

Source: Samsung

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booprince on December 29, 2017 00:10
3600 is alot of power :O haah just what i need !

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