SAMSUNG Develops 30nm DDR3 DRAM
SAMSUNG Electronics, a provider of a wide range of products have announced the development of 30nm DDR3 DRAM in 2 Gigabit (Gb) densities. The new modules of RAM will utilise voltages from either 1.5V down to only 1.35V, for all types of computer systems, including Desktops, Laptops and Servers. "Our accelerated development of next generation 30nm-class DRAM should keep us in the most competitive position in the memory market," said Soo-In Cho, president, Memory Division, Samsung Electronics.
Another advantage of having DRAM in such a small fabrication process is that yields greatly increase by up to 60% than 40nm DDR3 DRAM, and even double the cost-efficiency of 50nm and 60nm DRAM. The claimed total reduction in power will be up to 30% less than for 50nm products and a 4 Gigabyte (GB) module will only use up to 3 Watts per hour. Soo-in Cho added, "Our 30nm-class process technology will provide the most advanced low-power DDR3 available today and therein the most efficient DRAM solutions anywhere for the introduction of consumer electronics devices and server systems." Production will start in 2H 2010.